Electrolytically Ionized Abrasive-Free CMP (EAF-CMP) for Copper

Chemical–mechanical polishing (CMP) is a planarization process that utilizes chemical reactions and mechanical material removal using abrasive particles. With the increasing integration of semiconductor devices, CMP gaining importance in manufacturing. Abrasive-free (AF-CMP) uses solutions do not contain particles to reduce scratches improve capabilities. However, because AF-CMP does use for removal, rate (MRR) lower than conventional methods. In this study, we attempted efficiency electrolytic ionization solution (electrolytically ionized abrasive-free CMP; EAF-CMP). EAF-CMP had higher MRR AF-CMP, possibly due high reactivity former. EAF-CMP, addition hydrogen peroxide (H2O2) citric acid increased MRR, while benzotriazole (BTA) lowered rate. The results highlight need studies on diverse mechanisms future.